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SS8050
SS8050
2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
* Complimentary to SS8550 * Collector Current: IC=1.5A * Collector Power Dissipation: PC=2W (TC=25C)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 25 6 1.5 1 150 -65 ~ 150 Units V V V A W C C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=100A, IE=0 IC=2mA, IB=0 IE=100A, IC=0 VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=10V, IC=50mA 100 9.0 45 85 40 Min. 40 25 6 100 100 300 0.5 1.2 1 V V V pF MHz Typ. Max. Units V V V nA nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product
hFE Classification
Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300
(c)2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
SS8050
Typical Characteristics
0.5
1000
VCE = 1V
IC[mA], COLLECTOR CURRENT
IB = 3.0mA
0.4
IB = 2.5mA
0.3
hFE, DC CURRENT GAIN
2.0
100
IB = 2.0mA IB = 1.5mA
0.2
10
IB = 1.0mA
0.1
IB = 0.5mA
1 0.1
0
0.4
0.8
1.2
1.6
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
10000
100
IC = 10 IB
VCE = 1V
VBE(sat)
1000
IC[mA], COLLECTOR CURRENT
10 100 1000
10
100
1
VCE(sat)
10 0.1
1
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
1000
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IE = 0 f = 1MHz
VCE = 10V
Cob [pF], CAPACITANCE
100
100
10
10
1 1 10 100
1 1 10 100 400
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
(c)2004 Fairchild Semiconductor Corporation
Rev. B2, August 2004
SS8050
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. B2, August 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I11

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